This article is cited in 7 papers

Solid-State Electronics

Metal-semiconductor-metal photodiodes based on ZnCdS/GaP wide-gap heterostructures

S. V. Averin^a, P. I. Kuznetsov^a, V. A. Zhitov^a, N. V. Alkeev^a, V. M. Kotov^a, L. Yu. Zakharov^a, N. B. Gladysheva<sup>b

a</sup> Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
^b Joint-Stock Company "Scientific and Production Enterprise Pulsar", Moscow

Abstract: Good epitaxial ZnCdS layers are grown on GaP semiconductor substrates by metal-organic chemical vapor deposition. The respective photodiode structures are fabricated by the metal-semiconductor-metal method, and their characteristics are studied. The diodes feature low dark currents. The bias dependence of the spectral response of the detector is determined. The long-wavelength edge of the ZnCdS/GaP diodes shifts from 355 to 440 nm as the bias voltage varies from 40 to 80 V. At the maximal photosensitivity wavelength (355 nm), the ampere/watt sensitivity of the detector is 0.1 A/W.

Received: 16.12.2011

 English version: Technical Physics, 2012, 57:11, 1514–1518

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