I. A. Tarasov, N. N. Kosyrev, S. N. Varnakov, S. G. Ovchinnikov, S. M. Zharkov, V. A. Shvets, S. G. Bondarenko, O. E. Tereshchenko, “Quick ellipsometric technique for determining the thicknesses and optical constant profiles of Fe/SiO<nobr>$_2$</nobr>/Si(100) nanostructures during growth”, Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 82, Issue 9,Pages <nobr>44

This article is cited in 8 papers

Optics, Quantum Electronics

Quick ellipsometric technique for determining the thicknesses and optical constant profiles of Fe/SiO$_2$/Si(100) nanostructures during growth

I. A. Tarasov^ab, N. N. Kosyrev^ab, S. N. Varnakov^ab, S. G. Ovchinnikov^a, S. M. Zharkov^ac, V. A. Shvets^de, S. G. Bondarenko^a, O. E. Tereshchenko^d

^a L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
^b M. F. Reshetnev Siberian State Aerospace University,
^c Siberian Federal University, Krasnoyarsk
^d Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^e Novosibirsk State University

Abstract: An algorithm is developed to perform rapid control of the thickness and optical constants of a film structure during growth. This algorithm is tested on Fe/SiO$_2$/Si(100) structures grown in an Angara molecular-beam epitaxy setup. The film thicknesses determined during their growth are compared with X-ray spectral fluorescence analysis and transmission electron microscopy data.

Received: 04.10.2011