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Zhurnal Tekhnicheskoi Fiziki, 2012 Volume 82, Issue 8, Pages 110–113 (Mi jtf8904)

This article is cited in 22 papers

Surfaces, Electron and Ion Emission

Optical properties of TiÎ$_2$–MnO$_2$ thin films prepared by electron-beam evaporation

V. V. Brus, Z. D. Kovalyuk, P. D. Mar'yanchuk

Chernivtsi National University named after Yuriy Fedkovych

Abstract: The optical constants and thickness of TiÎ$_2$–MnO$_2$ films (with MnO$_2$ concentration of 0, 1, and 5%) prepared by electron-beam evaporation are determined. A considerable dependence of the optical properties of thin TiO$_2$ films on the manganese concentration is observed. It is found that thin films are indirect gap semiconductors with gap width $E_g$ = 3.43 eV (TiO$_2$), 2.89 eV (TiÎ$_2$–MnO$_2$ (1%)), and 2.73 eV (TiÎ$_2$–MnO$_2$ (5%)).

Received: 21.04.2011


 English version:
Technical Physics, 2012, 57:8, 1148–1151

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