This article is cited in 2 papers

Solid-State Electronics

Nanostructuring of the submonolayer carbon coatings deposited onto the surface of silicon single crystals in a low-pressure microwave discharge plasma

V. Ya. Shanygin, R. K. Yafarov

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences

Abstract: The surface nanostructuring of the submonolayer carbon coatings deposited onto (111) and (100) silicon wafers in a highly ionized ultrahigh-frequency low-pressure plasma is studied. The effect of the coating thickness and the main processing parameters on the mechanisms of morphological changes is studied with allowance for the reconstruction of a single-crystal silicon surface and the mechanical stresses that appear during the preparation of an atomically clean surface during plasma-chemical etching, heterogeneous condensation, and high-temperature annealing. Integral columnar nanosystems with a density of (4–5) $\cdot$ 10$^9$ cm$^{-2}$ and a height of 400 nm are formed on (100) silicon single crystals using nanostructured carbon aggregates as mask coatings and highly anisotropic plasma-chemical etching.

Received: 29.03.2011
Accepted: 13.12.2011

 English version: Technical Physics, 2012, 57:8, 1115–1120

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