M. V. Ivanchenko, V. A. Gritsenko, A. V. Nepomnyashchii, A. A. Saranin, “Enhancement of the electron-stimulated desorption from amorphous aluminum oxide films on silicon during an increase in the substrate temperatur”, Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 82, Issue 5,Pages <nobr>115

Surfaces, Electron and Ion Emission

Enhancement of the electron-stimulated desorption from amorphous aluminum oxide films on silicon during an increase in the substrate temperatur

M. V. Ivanchenko^ab, V. A. Gritsenko^c, A. V. Nepomnyashchii^a, A. A. Saranin^ab

^a Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
^b Far Eastern Federal University, Vladivostok
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The effect of high-temperature electron-stimulated desorption (ESD) from 20-nm-thick Al$_2$O$_3$ films deposited onto silicon wafers is studied. The ESD effect is found to be significantly enhanced upon heating. The films are found to decompose during ion beam irradiation of a heated substrate resulting in pure Al appearance. This process is accompanied by the formation of islands and almost pure silicon surface regions at a certain critical irradiation dose. Outside the irradiation zone, a 20-nm-thick Al$_2$O$_3$ film remains continuous even upon heating to 700$^\circ$C and holding for 90 min. The effect of the primary electron beam energy on ESD from a 20-nm-thick Al$_2$O$_3$ film on silicon is investigated, and the parameters at which ESD takes place or absent are determined.

Received: 05.08.2011