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Zhurnal Tekhnicheskoi Fiziki, 2012 Volume 82, Issue 4, Pages 150–152 (Mi jtf8808)

This article is cited in 6 papers

Brief Communications

Structure of a time-variable photoresponse from semiconductor sensors

A. V. But, V. P. Migal', A. S. Fomin

National Aerospace University "Kharkiv Aviation Institute"

Abstract: It is found that the conversion of time-variable photoresponse $I(t)$ from a crystal to signature $I(t)-dI/dt$ of the phase plane makes it possible to determine partial contributions from the constituents of the photoresponse and their interrelation. In addition, such a procedure allows one to introduce the integrative indices of stability $(B_{din})$ and asymmetry $(K_{\lambda,E})$ of the photoresponse’s structure, which reflect the influence of external and internal factors, respectively.

Received: 18.08.2011


 English version:
Technical Physics, 2012, 57:4, 575–577

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