Abstract:
The influence of natural aging on the photoluminescence intensity and the position of a photolu-minescence peak in $n$-type por-Si (por-Si) is studied. The variation of the phase composition and the relative content of the amorphous and oxide phases of silicon in por-Si during aging is determined by fitting simulated spectra to experimental ultrasoft Si $L_{2,3}$ X-ray emission spectra using reference spectra.
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