This article is cited in 2 papers

Surfaces, Electron and Ion Emission

Formation and investigation of cobalt silicide ultrathin layers in Ti/Co/Ti-, TiN/Ti/Co-, and TiN/Co-on-silicon structures

V. I. Rudakov, Yu. I. Denisenko, V. V. Naumov, S. G. Simakin

Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences

Abstract: The formation of ultrathin CoSi$_2$ layers in Ti(8 nm)/Co(10 nm)/Ti(5 nm), TiN(18 nm)/Ti(2 nm)/Co(8 nm), and TiN(18 nm)/Co(8 nm) systems magnetron-sputtered on the Si(100) surface is studied. The systems are subjected to two-step rapid thermal annealing. In between the annealing steps, the “sacrificial” layer is chemically removed and the second and third systems are additionally covered by a 17-nm-thick amorphous silicon ($\alpha$-Si) layer. In the course of the fabrication process, the structures are examined using time-of-flight secondary-ion (cation) mass spectrometry, Auger electron spectroscopy, and scanning electron microscopy combined with X-ray energy dispersion microanalysis. It is shown that the above complex of analytical investigation provides efficient physical control of ultrathin silicide layer formation.

Received: 04.05.2011

 English version: Technical Physics, 2012, 57:2, 279–285

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