International Conference of Physicists.SPb, October 20-24, 2025, Saint Petersburg
Mathematical physics and numerical methods

High-resolution impedance spectroscopy: application to the study of semiconductor devices and assessment of their potential for application in bioelectronics

N. A. Boytsova^a, A. A. Abelit^a, N. A. Verlov^b, D. D. Stupin<sup>a

a</sup> Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute"

Abstract: The reliability and accuracy of comparing experimentally observed phenomena with theoretical concepts always increases with the amount of useful experimental information. In this paper, we demonstrated the advantages of using high-resolution impedance spectroscopy (HRIS) for diagnostics of semiconductor devices. We demonstrated that HRIS not only allows one to obtain the classical capacitance-voltage (CV) characteristics of semiconductor devices but also to understand the nature of their electrical properties, in particular, to detect leakage in $p$–$n$ junctions. Furthermore, through subsequent comparative analysis of HRIS data for semiconductor devices and bioelectrodes, we found that their spectra are generally well described by R-CPE circuits, which can be used in the design of bioelectronic devices using both metal and semiconductor electrodes.

Keywords: equivalent circuits, high-resolution spectra, impedance spectroscopy, complex non-linear least squares, photodiode, solar cell, bioelectrodes.

Received: 05.05.2025
Revised: 23.06.2025
Accepted: 30.06.2025

DOI: 10.61011/JTF.2025.12.61774.240-25

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