Solid-State Electronics

UV detectors based on Ga$_2$O$_3$ films with high-speed performance

D. A. Almaev^ab, A. V. Tsymbalov^a, V. V. Kopyev<sup>a

a</sup> Tomsk State University
^b Tomsk State University of Control Systems and Radioelectronics

Abstract: The paper presents a study of the influence of annealing temperature in an Ar atmosphere and growth time of gallium oxide films on the electrical and photoelectric characteristics of Pt/Ga$_2$O$_3$ structures. Gallium oxide films were obtained by RF-magnetron sputtering on sapphire substrates with the base orientation (0001). Ga$_2$O$_3$ films are characterized by high transparency in the long-wave UV (UVA) and visible (VIS) ranges $T >$ 80%. The maximum photosensitivity value corresponds to structures annealed at 900$^\circ$C with an active region thickness of $d$ = 190 nm. The values of responsivity and photo-to-dark current ratio were 134 mA/W and 5.2 $\cdot$ 10$^5$ a. u., respectively, at a voltage of 100 V. The structures are characterized by high speed-performance, the shortest response and recovery times at a voltage of 10 V were 2.1 ms and 0.6 ms, respectively.

Keywords: photodetector, gallium oxide, RF-magnetron sputtering, UV radiation, speed-performance.

Received: 26.03.2025
Revised: 06.05.2025
Accepted: 30.06.2025

DOI: 10.61011/JTF.2025.11.61606.49-25

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