Physical science of materials

The influence of nanocomposites on the memristive properties of Cu/(Co$_{40}$Fe$_{40}$B$_{20}$)$_x$(SiO$_2$)$_{100-x}$/LiNbO$_3$/Cr/Cu/Cr capacitor structures

A. V. Sitnikov^ab, Yu. E. Kalinin^a, I. V. Babkina^a, A. E. Nikonov^a, D. S. Pogrebnoi^a, A. R. Shakurov<sup>a

a</sup> Voronezh State Technical University
^b National Research Centre "Kurchatov Institute", Moscow

Abstract: The paper reveals the results of a study of the memristive properties of the Cu/(Co$_{40}$Fe$_{40}$B$_{20}$)$_x$(SiO$_2$)$_{100-x}$/LiNbO$_3$/Cr/Cu/Cr/citall structure. It has been shown that the use of (Co$_{40}$Fe$_{40}$B$_{20}$)$_x$(SiO$_2$)$_{100-x}$ nanocomposites makes it possible to realize a set of good, practically significant memristive properties. Thus, the switching voltage from the HRS to the LRS state of the capacitor structure and back is $\pm$ 4 V, the $R_{\mathrm{off}}/R_{\mathrm{on}}$ ratio reaches hundreds of units, the number of reversible resistive switching cycles is more than 10$^4$, and the plasticity of resistive states are being realized. It has been confirmed that to implement a multifilament resistive switching in a dielectric layer, the presence of nanocomposite in the concentration range of the metal phase up to the percolation threshold is necessary as an upper electrode. In this case, the main role is played by the structure of the nanocomposite, and the elemental composition of the heterogeneous film is not so significant for the implementation of a complex of technologically significant properties of the memristor.

Keywords: resistive switching, memristors, nanocomposite, lithium niobate.

Received: 21.02.2025
Revised: 19.05.2025
Accepted: 18.06.2025

DOI: 10.61011/JTF.2025.11.61600.25-25

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