Frantsevich Institute for Problems of Materials Science, Chernovtsy Branch, National Academy of Sciences of Ukraine, Chernovtsy, 58001, Ukraine
Abstract:
It is shown that layered InSe, GaSe, and Bi$_2$Te$_3$ semiconductors are promising for sensitive elements of pressure transducers. Two ways for measuring pressure with layered crystals are suggested: from the pressure dependence of the intercalation parameter (current) and from the pressure dependence of the intercalate electromotive force.