V. A. Shvets, S. V. Rykhlitskii, I. Ya. Mittova, E. V. Tomina, “Analysis of the optical and structural properties of oxide films on InP using spectroscopic ellipsometry”, Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 11,Pages <nobr>92

This article is cited in 2 papers

Optics

Analysis of the optical and structural properties of oxide films on InP using spectroscopic ellipsometry

V. A. Shvets^ab, S. V. Rykhlitskii^ab, I. Ya. Mittova^c, E. V. Tomina^c

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c Voronezh State University

Abstract: The optical properties of oxide films grown on InP with the aid of various procedures are studied using spectroscopic ellipsometry. Methodological approaches and techniques for the interpretation of the results of the ellipsometric measurements are analyzed. It is demonstrated that the films resulting from the oxidation of the structures with the magnetron-sputtered chemostimulator exhibit relatively low absorption, normal dispersion of the refractive index, and sharp interfaces. As distinct from such films, the films that result from the oxidation of InP with active centers created by the explosion of a vanadium wire or deposition of chemostimulator from sol or gel exhibit strong absorption bands over the entire spectral range and substantial dispersion of optical properties in the interface regions. The applicability limits for the express diagnostics of the films based on the measurements using a single-wavelength laser ellipsometer are determined.

Received: 22.06.2012