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Zhurnal Tekhnicheskoi Fiziki, 2013 Volume 83, Issue 11, Pages 86–91 (Mi jtf8618)

This article is cited in 3 papers

Solid-State Electronics

Annual dependences of generated power and electrical energy for $a$-Si:H-based solar cells

Yu. V. Kryuchenkoa, A. V. Sachenkoa, A. V. Bobyl'b, V. P. Kostylyova, I. O. Sokolovskyia, E. I. Terukovbc, V. N. Verbitskiib, Yu. A. Nikolaevbc

a Institute of Semiconductor Physics NAS, Kiev
b Ioffe Institute, St. Petersburg
c R&D Center TFTE, St.-Petersburg

Abstract: The annual dependences of the powers and energies generated by the unit area of a solar cell (SC) are calculated for $a$-Si:H-based SCs operating at latitudes of 45$^\circ$N, 50$^\circ$N, 55$^\circ$N, and 60$^\circ$N and in some geographical localities of Russia. Normalization of these dependences gives an idea about the corresponding annual dependences for SCs based on other semiconductors. Combined with the data on the average number of sunny days in a year (or the total duration of sunshine per year) for a specific region in Russia, this information makes it possible, in particular, to judge about the prospects for constructing solar power plants in these regions. As a result, the regions in Russia for which the excess over the average values of electrical energy generated by solar power plants may reach 24% are determined.

Received: 30.01.2013


 English version:
Technical Physics, 2013, 58:11, 1632–1637

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