Yu. V. Kryuchenko, A. V. Sachenko, A. V. Bobyl', V. P. Kostylyov, I. O. Sokolovskyi, E. I. Terukov, V. N. Verbitskii, Yu. A. Nikolaev, “Simulation of daytime variations in the characteristics of <nobr>$a$</nobr>-Si:H solar cells”, Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 11,Pages <nobr>78

This article is cited in 4 papers

Solid-State Electronics

Simulation of daytime variations in the characteristics of $a$-Si:H solar cells

Yu. V. Kryuchenko^a, A. V. Sachenko^a, A. V. Bobyl'^b, V. P. Kostylyov^a, I. O. Sokolovskyi^a, E. I. Terukov^bc, V. N. Verbitskii^b, Yu. A. Nikolaev^bc

^a Institute of Semiconductor Physics NAS, Kiev
^b Ioffe Institute, St. Petersburg
^c R&D Center TFTE, St.-Petersburg

Abstract: The time dependences of the key characteristic of $a$-Si:H solar cells over daylight hours are theoretically simulated. The model is used to calculate the time dependences for an arbitrary geographic latitude in the interval 30$^\circ$–60$^\circ$ and arbitrary day of the year. The calculated results are illustrated for a geographic latitude of 45$^\circ$ and equinox. The relative variations in the characteristics of the $a$-Si:H solar cells are valid with a relatively high accuracy for the solar cells based on alternative semiconductors provided that their efficiency ranges form 7 to 20%.

Received: 05.12.2012