K. J. Mynbaev, N. L. Bazhenov, A. V. Shilyaev, S. A. Dvoretskii, N. N. Mikhailov, M. V. Yakushev, V. G. Remesnik, V. S. Varavin, “High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 10,Pages <nobr>147

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Brief Communications

High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy

K. J. Mynbaev^a, N. L. Bazhenov^a, A. V. Shilyaev^a, S. A. Dvoretskii^b, N. N. Mikhailov^b, M. V. Yakushev^b, V. G. Remesnik^b, V. S. Varavin^b

^a Ioffe Institute, St. Petersburg
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The spectra of the high-temperature (up to 300 K) photoluminescence of the heteroepitaxial structures based on the CdHgTe solid solutions that are grown using molecular-beam epitaxy and emit at room temperature in the wavelength interval $\lambda$ = 1.5–4.3 $\mu$m are analyzed. It is demonstrated that the observed photoluminescence of the CdHgTe narrow-gap semiconductor at high temperatures and the specific features of the high-temperature spectra can be interpreted using the disorder of the solid solution as in the case of the solid solutions of the group-III nitrides.

Received: 28.01.2013