XXIX Symposium "Nanophysics and Nanoelectronics" in Nizhny Novgorod, March 10-14, 2025
Physical electronics

Production of ultra-thin superconducting films from NbN by cathode sputtering at substrate temperatures 20$^\circ$C–120$^\circ$C

B. A. Gurovich^a, B. V. Goncharov^a, K. E. Prikhod'ko^ab, V. L. Stolyarov^a, L. V. Kutuzov^a, D. A. Goncharova^a, E. M. Malieva^a, M. M. Dementyeva^a, G. Yu. Golubev^a, A. S. Frolov<sup>a

a</sup> National Research Centre "Kurchatov Institute", Moscow
^b National Engineering Physics Institute "MEPhI", Moscow

Abstract: Ultrathin NbN films with a thickness of 5.5nm were made by cathode sputtering. The films were sputtered on sapphire substrates at various temperatures from 20$^\circ$C to 120$^\circ$C. The transition temperature to the superconducting state, depending on the substrate temperature during sputtering, was 6.9–9.8 K. The technique of sputtering ultrathin NbN films using cathode sputtering (Penning cells) is described in detail. The critical current density of the studied films lies in the range of 1.12–3.5 10$^5$ A/cm$^2$.

Keywords: cathodic sputtering, niobium nitride, inhomogeneity, transition temperature to the superconducting state, critical current density.

Received: 12.05.2025
Revised: 12.05.2025
Accepted: 12.05.2025

DOI: 10.61011/JTF.2025.10.61346.111-25

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