Abstract:
This work reports on investigation of ultra-thin niobium and niobium nitride films. The films differ by substrates, presence of a buffer layer, oxidation time and rate, ion beam irradia-tion. Depth profiling of niobium nitride thin films has been performed by means of X-ray photoe-lectron spectroscopy. It has been found that a layer of a modified phase of niobium nitride is formed under the oxide layer; when an ultra-thin niobium nitride film is deposited on an oxidized silicon substrate by the magnetron sputtering method, an interface layer about 1 nm thick is gen-erated; no interface layer is formed by depositing of an ultra-thin niobium nitride film on a sap-phire substrate; the oxide layer thickness and phase compound depends on oxidation time and rate of the niobium nitride film; under ion beam irradiation, both thickness and phase compound of the irradiated NbN film change.
Keywords:niobium nitride, ultra-thin films, X-ray photoelectron spectroscopy, chemical and phase depth profiling.
Fulltext:
PDF file (465 kB)