This article is cited in 5 papers

Physical science of materials

Phase size effect in thin Ge–Se polycrystalline films

E. V. Aleksandrovich^a, E. V. Stepanova^a, A. V. Vakhrouchev^a, A. N. Aleksandrovich^b, D. L. Bulatov<sup>a

a</sup> Institute of Mechanics, Ural Branch of RAS, Izhevsk
^b Udmurt State University, Izhevsk

Abstract: The Raman spectra of thin ($d$ = 60–170 nm) Ge-Se polycrystalline films obtained by vacuum thermal evaporation of Ge$_{10}$Se$_{90}$ glass are investigated in the spectral range 110–310 cm$^{-1}$. The coexistence of the glasslike and crystalline phases $\alpha$-Se, $\beta$-Se, and $\beta$-GeSe$_2$ is established using the X-ray diffraction method. Analysis of diffraction patterns and the Raman spectra of polycrystalline samples of various thicknesses demonstrates a phase size effect in the transition of Se from the $\alpha$-monoclinic to the $\beta$ monoclinic modification ($d\sim$ 120 nm). It is found that the crystalline phase of Se is of the nanodisperse type with an average grain size of $\sim$ 30–50 nm. Crystallites of $\beta$-GeSe$_2$ have an average size of $\sim$ 100–130 nm.

Received: 16.10.2012

 English version: Technical Physics, 2013, 58:9, 1291–1296

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