T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov, G. I. Ivakin, “Photocurrent saturation and negative differential photoconductivity in Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Мn$_4$Si$_7$ and Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–М heterojunctions”, Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 6,Pages 128

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Solid-State Electronics

Photocurrent saturation and negative differential photoconductivity in Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Мn$_4$Si$_7$ and Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–М heterojunctions

T. S. Kamilov^a, V. V. Klechkovskaya^b, B. Z. Sharipov^a, G. I. Ivakin^b

^a Tashkent State Technical University named after A. R. Beruni
^b Institute of Cristallography Russian Academy of Sciences, Moscow

Abstract: A mechanism behind the saturation of the photocurrent and occurrence of negative differential photoconductivity in Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Мn$_4$Si$_7$ and Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–М heterojunctions is found. Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–Мn$_4$Si$_7$ and Мn$_4$Si$_7$–Si$\langle$Mn$\rangle$–М structures are studied with a model of back-to-back diodes. Photocurrent-voltage characteristics are taken at high constant and pulsed applied biases. It is found that the nonlinearity of the photocurrent-voltage characteristics and photoconductivity kinetics are due to the quenching of photoconductivity by Joule self-heating.

Received: 06.12.2011
Accepted: 03.05.2012