B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, Kh. Kh. Boltaev, “Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF<nobr>$_2$</nobr> surface layers using low-energy ion implantation”, Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 83, Issue 6,Pages <nobr>66

This article is cited in 17 papers

Physical electronics

Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF$_2$ surface layers using low-energy ion implantation

B. E. Umirzakov, D. A. Tashmukhamedova, D. M. Muradkabilov, Kh. Kh. Boltaev

Tashkent State Technical University named after Islam Karimov

Abstract: A review of the experimental results on the study of the Si, GaAs, and CaF$_2$ surface layers that are created using the low-energy ion implantation is presented. Optical and electron spectroscopy and microscopy are employed in the experiments.

Received: 31.10.2012