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Zhurnal Tekhnicheskoi Fiziki, 2013 Volume 83, Issue 6, Pages 45–50 (Mi jtf8455)

This article is cited in 1 paper

Physical electronics

Application of the surface ionization for the detection of secondary particles in the secondary-ion mass spectrometry (SIMS)

S. N. Morozov, U. Kh. Rasulev

Institute of Ion-Plasma and Laser Technologies, Uzbekistan Academy of Sciences, Tashkent

Abstract: A method for postionization in the course of ion sputtering that is based on surface ionization of the sputtered particles is developed. The estimations show that the method allows a significant increase in the sensitivity of the secondary-ion mass spectrometry for several elements. Nonadditive increase in the sputtering coefficient of indium is experimentally studied using the surface-ionization method of postionization when the number of atoms in projectile clusters Bi$_m^+$ ($m$ = 1–7) increases at energies 2–10 keV. Such a scheme for the detection of neutral particles can be used in alternative methods for the surface analysis, in particular, laser evaporation of surface and electron-stimulated desorption.

Received: 31.10.2012


 English version:
Technical Physics, 2013, 58:6, 821–826

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