This article is cited in 2 papers

Physics of nanostructures

Nanomorphological characteristics of the single-crystal Si(100) surface subjected to microwave plasma processing at weak adsorption

V. Ya. Shanygin, R. K. Yafarov

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences

Abstract: The influence of the conditions and composition of the highly ionized plasma of an electron cyclotron resonance low-pressure microwave gas discharge on the nanomorphology of the single-crystal Si(100) surface is studied. Model mechanisms of the processes controlling the main nanomorphological parameters of silicon crystals subjected to low-energy microwave plasma processing in chemically active and inactive gaseous media under the conditions of weak adsorption are considered.

Received: 02.03.2012
Accepted: 20.07.2012

 English version: Technical Physics, 2013, 58:4, 557–562

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