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Zhurnal Tekhnicheskoi Fiziki, 2013 Volume 83, Issue 1, Pages 105–109 (Mi jtf8334)

This article is cited in 7 papers

Solid-State Electronics

High-voltage field-controlled integrated thyristor

I. V. Grekhova, A. V. Rozhkova, L. S. Kostinaa, A. V. Konovalovb, Yu. L. Fomenkob

a Ioffe Institute, St. Petersburg
b SC "VSP-Mikron", Voronezh

Abstract: The design and technology of powerful field-controlled integrated thyristors, new energy-saving devices intended for converter equipment, are considered. The turn-on and turn-off current and voltage waveforms of the $n^+p'N^-n'p^+$ microthyristor chip are presented, and turn-on and turn-off mechanisms are discussed. The development of local dynamic breakdown at turn-off is experimentally studied. The respective waveforms for this process are given, and the type of breakdown at a current density of about 150 A/cm$^2$ is demonstrated. The current-voltage characteristics in the on state at room temperature and at 125$^\circ$C indicate the temperature dependence changes sign at a current density above 60 A/cm$^2$, becoming positive. This is significant for parallel operation of microthyristor chips in a module. It is shown that the static and dynamic characteristics of simple-in-design field-controlled integrated thyristors are highly competitive with those of insulated-gate bipolar transistors-basic devices of advanced high-power converter equipment.

Received: 13.03.2012


 English version:
Technical Physics, 2013, 58:1, 100–104

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