This article is cited in 4 papers

Physical science of materials

Pulsed nanosecond annealing of magnesium-implanted silicon

N. G. Galkin^ab, S. V. Vavanova^a, K. N. Galkin^a, R. I. Batalov^c, R. M. Bayazitov^c, V. I. Nuzhdin<sup>c

a</sup> Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok
^b Far Eastern Federal University, Vladivostok
^c Zavoisky Physical Technical Institute, Kazan Scientific Center of the Russian Academy of Sciences

Abstract: Single-crystalline silicon is implanted by magnesium ions at room temperature and then subjected to pulsed ion-beam annealing. The surface morphology, crystallinity, and optical properties of the implanted silicon are studied before and after annealing. It is shown that ion implantation makes a near-surface layer of silicon about 0.1 m thick amorphous. Pulsed nanosecond ion-beam annealing results in silicon recrystallization and the formation of crystalline magnesium silicide precipitates. Optimal values of the implantation dose and pulse energy density for the formation of magnesium silicide precipitates in the near-surface layer of silicon are found.

Received: 25.01.2012

 English version: Technical Physics, 2013, 58:1, 94–99

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