Abstract:
The effect of oxygen vacancy concentration on the parameters of resistive switching in the memristors based on yttria stabilized zirconia ZrO$_2$(Y) was studied. The concentration of oxygen vacancies inside the ZrO$_2$(Y) film and in the region of resistive switching (metal/dielectric interface) varied by changing the doping impurity concentration (8 or 12mol.%Y$_2$O$_3$) as well as by changing the oxygen exchange conditions by using different active electrode materials having different oxidation properties (Ta, W, or Ru). X-ray photoelectron spectroscopy and conductive atomic force microscopy have revealed the presence of a region saturated with oxygen vacancies and the formation of conductive channels during the manufacture of the memristor stacks that makes it possible to create the memristors, which do not require forming. Electrical measurements have shown that the stacks based on ZrO$_2$(Y) films with the Y$_2$O$_3$ concentration of 8 mol% demonstrate smooth resistive switching and smaller spread of the current states that may be interesting for neuromorphic applications. The stacks with Ta and W electrodes exhibited similar resistive switching parameters and good CMOS integration capabilities whereas the stacks with Ru electrodes have parameters incompatible with CMOS requirements.
Fulltext:
PDF file (944 kB)