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Zhurnal Tekhnicheskoi Fiziki, 2014 Volume 84, Issue 12, Pages 149–151 (Mi jtf8295)

Brief Communications

Determination of trapping levels in AgGaSe$_2$ single crystals by the thermal cleaning method

F. I. Mamedov, S. M. Zarbalieva, E. K. Gurbanova

Academy of the Ministry for Emergency Situations of the Azerbaijan Republic, Baku

Abstract: The spectra of thermostimulated conductivity are studied in wide temperature and electric voltage ranges (100–400 K and 5–300 V, respectively) for single crystals of AgGaSe$_2$ ternary compound. Using the thermal cleaning method, two levels with an activation energy of 0.11 eV are found in the energy gap. The behavior of these levels with the same activation energies in different crystals allows us to conclude that these levels are characteristic of this compound and result from repeated trapping.

Received: 16.01.2014


 English version:
Technical Physics, 2014, 59:12, 1885–1887

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