P. B. Boldyrevskii, A. G. Korovin, S. A. Denisov, S. P. Svetlov, V. G. Shengurov, “Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy”, Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 11,Pages <nobr>155

This article is cited in 3 papers

Brief Communications

Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy

P. B. Boldyrevskii^a, A. G. Korovin^a, S. A. Denisov^b, S. P. Svetlov^b, V. G. Shengurov^b

^a National Research Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The thickness distributions of epitaxial layers over the substrate area are experimentally and theoretically studied for deposition from a molecular beam formed by a sublimation source in vacuum. The calculated data agree well with the experimental results for the molecular-beam epitaxy of silicon.

Received: 20.03.2014