S. A. Karandashov, B. A. Matveev, V. I. Ratushnyi, M. A. Remennyi, A. Yu. Rybalchenko, N. M. Stus, “Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes”, Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 11,Pages <nobr>52

This article is cited in 2 papers

Solid-State Electronics

Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes

S. A. Karandashov^a, B. A. Matveev^a, V. I. Ratushnyi^b, M. A. Remennyi^a, A. Yu. Rybalchenko^b, N. M. Stus^a

^a Ioffe Institute, St. Petersburg
^b Volgodonsk Engineering and Technology Institute, Branch of National Research Nuclear University Moscow Engineering Physics Institute

Abstract: The I–V characteristics of front-surface-illuminated InAsSb(P) photodiodes are simulated in terms of a simple model that takes into account the radial variation of the lateral resistance of a semiconductor layer on the irradiated side. The applicability of the model for predicting the form of the photocurrent density distribution and its influence on the sensitivity of the photodiodes is demonstrated.

Received: 15.07.2013
Accepted: 21.04.2014