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Peculiarities of the capacitance-voltage characteristic of a photoelectric solar energy convertor based on a silicon $p$–$n$ junction with a porous silicon antireflection coating

V. V. Tregulov

Ryazan State University S. A. Esenin

Abstract: Experimental results on the high-frequency capacitance-voltage characteristic of a photoelectric solar energy converter based on the $n^+$–$p$ junction with a thin porous silicon film on the frontal surface are considered. It is shown that the capacitance-voltage characteristic is determined by the surface metal-insulator-semiconductor (MIS) structure formed as a result of growing of a porous silicon layer by electrochemical anode etching. The effective thickness of the insulator layer of the MIS structure, the impurity concentration in its semiconductor region, and the density of surface states are determined.

Received: 06.03.2014

 English version: Technical Physics, 2014, 59:9, 1413–1414

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