This article is cited in 2 papers

Solid-State Electronics

Anisotropic layered high-temperature thermoelectric materials based on the two-phase CrSi$_2$-$\beta$-FeSi$_2$ system

F. Yu. Solomkin^a, V. K. Zaitsev^a, S. V. Novikov^a, A. Yu. Samunin^a, D. A. Pshenay-Severin^a, G. N. Isachenko<sup>ab

a</sup> Ioffe Institute, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The feasibility of synthesizing a wide spectrum of multiphase microstructurally ordered high-temperature thermoelectrics with highly anisotropic thermoelectric parameters is demonstrated with an aluminum-doped CrSi$_2$-$\beta$-FeSi$_2$ system the composition of which varies from Cr$_{0.1}$Fe$_{0.9}$Si$_{(2-x)}$Al$_x$ to Cr$_{0.9}$Fe$_{0.1}$Si$_{(2-x)}$Al$_x$ ($x$ = 0.0 – 0.4). Doping of either phase (CrSi$_2$ and $\beta$-FeSi$_2$) is viewed as a promising way for synthesizing $n$- and $p$-type domains inside the same sample.

Received: 14.11.2013
Accepted: 26.12.2013

 English version: Technical Physics, 2014, 59:8, 1209–1214

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