N. N. Kosyrev, V. A. Shvets, N. N. Mikhailov, S. N. Varnakov, S. G. Ovchinnikov, S. V. Rykhlitskii, I. A. Yakovlev, “Ellipsometric technique for determining in situ the absorption coefficient of semiconducting nanolayers”, Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 84, Issue 5,Pages <nobr>109

Optics

Ellipsometric technique for determining in situ the absorption coefficient of semiconducting nanolayers

N. N. Kosyrev^a, V. A. Shvets^bc, N. N. Mikhailov^c, S. N. Varnakov^ad, S. G. Ovchinnikov^a, S. V. Rykhlitskii^c, I. A. Yakovlev^a

^a L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
^b Novosibirsk State University
^c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^d M. F. Reshetnev Siberian State Aerospace University,

Abstract: An algorithm that makes it possible to solve the inverse problem of ellipsometry aimed at determining the absorption coefficient on the basis of a single-zone ellipsometric experiment during the growth of thin semiconducting films is developed and implemented. The technique is based on analysis of the variation of ellipsometric parameters $\Psi$ and $\Delta$ directly during the growth. The algorithm is tested in synthesis of Si/SiO$_2$/Si(100) and Hg$_{1-x}$Cd$_x$Te structures.

Received: 07.06.2013