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Brief Communications

Appearance conditions for a semiconducting-substrate-induced gap in the density of states in epitaxial graphene

S. Yu. Davydov<sup>ab

a</sup> Ioffe Institute, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The density of states in a semiconducting substrate is described with a model assuming a parabolic electronic spectrum. Analytical criteria for the appearance of a gap (gaps) in the density of states in epitaxial graphene are derived, and its (their) parameters (width and position relative to the forbidden gap of the substrate) are found. A way to experimentally verify analytical data is suggested.

Received: 22.08.2013

 English version: Technical Physics, 2014, 59:4, 624–627

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