This article is cited in 9 papers

Solid-State Electronics

Current-voltage characteristics of thin Ge$_2$Sb$_2$Te$_5$ films taken using a measuring circuit with a current source

S. A. Fefelov^a, L. P. Kazakova^ab, S. A. Kozyukhin^c, K. D. Tsendin^a, D. Arsova^d, V. Pamukchieva<sup>d

a</sup> Ioffe Institute, St. Petersburg
^b Saint Petersburg State Forest Technical University under name of S. M. Kirov
^c Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Moscow
^d Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia

Abstract: The measuring circuit with a voltage generator, which is traditionally used for studying electric properties of glasslike semiconductors, is compared with an alternative version using a current generator. The results obtained in the latter case reflect the interrelation between the memory formation effect and changes in the electrical parameters more comprehensively. A new electric parameter, viz. hold voltage $U_{\mathrm{hold}}$, which has not been described earlier, is introduced. The relation between $U_{\mathrm{hold}}$ and the memory formation process during the phase transition is established. The effect of emergence of oscillations in the current-limiting regime in the conduction channel in the film is detected.

Received: 28.05.2013

 English version: Technical Physics, 2014, 59:4, 546–550

Bibliographic databases:

•