Abstract:
The feasibility of controlling the electronic properties of the semiconductor surface by varying conditions for its processing is considered. The study of electron transverse transport in heterostructures based on a (100)Si single crystal and a tunnel-thin film of hydrogenized amorphous silicon carbide shows that the form of the I–V characteristic of such structures depends on the density of dangling bonds on the surface. They arise when silicon single crystals of a given orientation are subjected to microprocessing by a highly ionized microwave plasma in different plasma-forming media to obtain an atomically clean surface.
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