This article is cited in 14 papers

Brief Communications

Electronic structure of Ga$_{1-x}$Al$_x$As nanostructures grown on the GaAs surface by ion implantation

S. B. Donaev, B. E. Umirzakov, D. A. Tashmukhamedova

Tashkent State Technical University named after Islam Karimov

Abstract: The surface morphology and electronic properties of nanocrystalline phases and 2–7-nm-thick Ga$_{1-x}$Al$_x$As films grown on the GaAs(111) surface by Al$^+$ ion implantation with subsequent (laser + thermal) annealing are studied. It is found that bandgap $E_g$ of the Ga$_{0.5}$Al$_{0.5}$As nanocrystalline surface phase 25–30 nm in size equals 2.8–2.9 eV.

Received: 13.01.2015

 English version: Technical Physics, 2015, 60:10, 1563–1566

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