This article is cited in 4 papers

Physics of nanostructures

Electric field and charge density in the plane of a quasi-equilibrium asymmetric 2D $p$–$n$ junction with zero current

Yu. G. Peisakhovich, A. A. Shtygashev, L. A. Borynyak, N. Yu. Petrov

Novosibirsk State Technical University

Abstract: The problem of the distribution of potential and surface charge density in a thin layer containing a quasi-two-dimensional $p$–$n$ junction is reduced to the solution of an integral equation. Numerical solution of such an equation is obtained for an asymmetric 2D $p$–$n$ junction in the strong degeneracy and quasi-equilibrium conditions. The boundary conditions on the lines of intersection of the Fermi level and the thresholds of size-quantization subbands are used. The dependence of the width of the depletion region on the impurity concentration and bias voltage is analyzed.

Received: 27.10.2014

 English version: Technical Physics, 2015, 60:10, 1494–1500

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