This article is cited in 9 papers

Solid-State Electronics

High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters

P. A. Ivanov, I. V. Grekhov

Ioffe Institute, St. Petersburg

Abstract: A simple mathematical model of 4H:SiC sharp-recovery drift diodes with a $p^+$–$p$–$n_0$–$n^+$ structure. With this model, the limiting electrical parameters of high-voltage (2–10 kV) pulse generators built around these diodes are theoretically estimated.

Received: 17.11.2014

 English version: Technical Physics, 2015, 60:6, 897–902

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