Abstract:
The structure that is formed on the VO$_2$-nanocomposite surface using electron-beam irradiation at medium energies (5–8 keV) is studied with the aid of optical, optical diffraction, and atomic force methods. The electron beam can be used to control the temperature of the semiconductor-metal phase transition, spectral composition of reflected radiation, and a jump of the reflectance of the nanocomposite that is related to the phase transition. The physical principle of such a control is based on the donor properties of the back-donation $\sigma$ bonds that result from variations in the structure of the oxygen octahedron under electron-beam irradiation.