Abstract:
The problem of surface plasma oscillations propagating along a layered “dielectric–semiconductor–dielectric” nanostructure is solved within the quantum theory of charge carrier transport phenomena. The case of symmetrical charge carrier distribution at the boundaries of a semiconductor nanolayer is considered. Expressions are derived for the wave propagation and attenuation coefficients as a function of the semiconductor layer thickness, surface wave frequency, chemical potential, permittivity of insulating layers, and roughness parameters of the “semiconductor–dielectric” interfaces. Oscillations of the frequency dependences of the wave propagation length are detected, the period and amplitude of which correspondingly depend on the semiconductor nanolayer thickness and the surface roughness parameters.
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