Solid-State Electronics

The nature of terahertz radiation in magnetic nanojunctions when current flows through them

S. G. Chigarev^a, E. A. Vilkov^a, O. A. Byshevski-Konopko^a, A. I. Panas^b, L. A. Fomin^c, I. V. Malikov<sup>c

a</sup> Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
^b Research and Production Corporation "Istok" named after Shokin, Fryazino, Moskovskaya obl.
^c Institute of Microelectronics Technology and High-Purity Materials RAS

Abstract: The modes of operation of a spin-injected THz-emitter using a rod-film structure in the region of starting current values (current density) have been investigated. For Fe$_3$O$_4$ and Fe films, two mechanisms of THz-emission emergence have been experimentally established. One of them is related to the change in the energy of the sd-exchange interaction during the transition of the magnetic layer interface by spin-polarized current, when a part of electrons decreases its energy without spin flip, and the other is determined by interband transitions with spin flip at high values of current density. The theoretical substantiation of the observed two mechanisms of THz-radiation excitation is carried out.

Keywords: spin, magnetic transition, spin polarization, sd-exchange interaction, THz radiation.

Received: 22.01.2024
Revised: 13.03.2025
Accepted: 24.03.2025

DOI: 10.61011/JTF.2025.07.60661.16-24

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