Physical science of materials

Effect of strain on thermoEMF in the silicate glass doped with ruthenium dioxide

M. Tursunov^a, A. Dekhkonov^a, G. Abdurakhmanov^a, V. K. Ksenevich^b, D. Tashmukhamedova^c, G. Vohidova^d, Dibya Prakash Rai<sup>e

a</sup> National University of Uzbekistan named after M. Ulugbek, Tashkent
^b Belarusian State University, Minsk
^c Tashkent State Technical University named after Islam Karimov
^d The training center "Alfakom", Tashkent
^e Pachhunga University College, Pachhunga, 796001 Aizawl Mizoram, India

Abstract: The effect of uniaxial strain on the thermoEMF of the ruthenium dioxide-doped silicate glass (thick film resistor) was studied. The variation of the thermoEMF has been analysed based on the dopant compositions and applied strain. We comprehensively studied a doped sample's complex matrix concerning the atoms' radial distribution. We report the enhanced value of the thermoEMF in the deformed sample by 20–100 times larger than the unstrained one. We have measured the ratio of the strained-induced thermoEMF and the resistance in a complex matrix with the lowest atomic arrangement. However, the highest coefficient of thermoEMF (Seebeck coefficient) has been found in the simplest glass composition. ThermoEMF measured in the doped silicate glass is sensitive to the measuring tool.

Keywords: Seebeck coefficient, strain gauge coefficient, strain sensor, three-point bending installation, piezoresistive effect.

Received: 06.11.2024
Revised: 19.02.2025
Accepted: 19.03.2025

DOI: 10.61011/JTF.2025.07.60660.405-24

Bibliographic databases:

•