This article is cited in 1 paper

XXVI International Symposium "Nanophysics and nanoelectronics", N.Novgorod, 14 - 17 March 2022
Experimental Instruments and Technique

Method for obtaining atomically smooth substrates from single-crystal silicon by mechanical lapping

N. I. Chkhalo^a, A. A. Akhsakhalyan^a, M. V. Zorina^a, M. N. Toropov^a, Yu. M. Tokunov<sup>b

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, 607680 Nizhny Novgorod, Russia
^b Moscow Institute of Physics and Technology (National Research University), 141701 Dolgoprudny, Moscow oblast, Russia

Abstract: The paper reports on the developed technique for polishing single-crystal silicon substrates using a mechanical lap. The effective substrate roughness was obtained in the spatial frequency range of 0.025–65 $\mu$m$^{-1}$ at the level of 0.37 nm and 0.18 nm at a frame size on the surface of 2 $\times$ 2 $\mu$m$^2$. The result obtained is comparable with the results of chemical-mechanical and dynamic polishing of single-crystal silicon wafers for microelectronics.

Keywords: surface, roughness, synchrotron radiation, polishing.

Received: 22.04.2022
Revised: 22.04.2022
Accepted: 22.04.2022

DOI: 10.21883/JTF.2022.08.52795.103-22

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