This article is cited in 1 paper

XXVI International Symposium "Nanophysics and nanoelectronics", N.Novgorod, 14 - 17 March 2022
Physical Electronics

Study of the influence of the energy of argon ions on the surface roughness of the main sections of single-crystal silicon

M. S. Mikhailenko, A. E. Pestov, A. K. Chernyshev, M. V. Zorina, N. I. Chkhalo, N. N. Salashchenko

Institute for Physics of Microstructures, Russian Academy of Sciences, 607680 Nizhny Novgorod, Russia

Abstract: The paper presents the results of studying the energy dependences of the sputtering yields and the value of the effective surface roughness of single-crystal silicon upon irradiation with argon ions with an energy of 200–1000 eV. As a result of the work, the parameters of ion-beam etching with accelerated Ar ions were determined, providing a high sputtering yield (etching rate) and an effective roughness value in the spatial frequency range 4.9$\cdot$10$^{-2}$–6.3$\cdot$10$^1$ $\mu$m$^{-1}$ less than 0.3 nm for the main cuts monocrystalline silicon $\langle$100$\rangle$, $\langle$110$\rangle$ and $\langle$111$\rangle$.

Keywords: sputtering yield, roughness, single-crystalline, monocrystalline, accelerated ions.

Received: 06.04.2022
Revised: 06.04.2022
Accepted: 06.04.2022

DOI: 10.21883/JTF.2022.08.52787.70-22

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