XXVI International Symposium "Nanophysics and nanoelectronics", N.Novgorod, 14 - 17 March 2022
Solid State Electronics

Local anodic oxidation of silicon for create crossbar architecture

V. V. Polyakova, A. V. Saenko

Southern Federal University, 344006 Rostov-on-Don, Russia

Abstract: Paper present possibility of creation a neuromatrix in the form crossbar architecture on a silicon substrate is shown. Crossbar architecture in the form of a set of nanosized conductors, between which there is a layer of titanium oxide, capable of changing its conductivity under the action of the applied voltage, it is proposed to form using the method of local anodic oxidation. The results is present of the study technological parameters of the method of local anodic oxidation silicon and titanium for the implementation of the elements of this neuromatrix in the form of a memristor structures.

Keywords: silicon, titanium, local anodic oxidation, neuromatrix, crossbar.

Received: 28.04.2022
Revised: 28.04.2022
Accepted: 28.04.2022

DOI: 10.21883/JTF.2022.08.52777.105-22

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