XXVI International Symposium "Nanophysics and nanoelectronics", N.Novgorod, 14 - 17 March 2022
Theoretical and Mathematical Physics

Ion-beam lithography: modelling and analytical description of the deposited in resist energy

Ya. L. Shabelnikova, S. I. Zaytsev

Institute of Microelectronic Technology Problem and high purity materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow oblast, Russia

Abstract: The energy deposited in resist during its exposure by ion beam was simulated for ions from a set of rare gases and for gallium. It was shown that the distribution of energy density can be approximated by the product of two Gaussian functions. One of them describes the lateral distribution of energy, the second the dependence on depth. The widths and centres of these Gaussian functions are determined by the energy length (also mentioned in the literature as “Range” or “mean length of trajectories”), the mass of ions and the average atomic number of resist. The obtained description would make it possible to estimate the size of the resist modified volume for any type of ion with energy of tens keV. So it can be used for a priori estimates of resolution and performance, as well as for the choice of beam energy and ion type based on this.

Keywords: lithography, nanostructuring, ion beam, resist, modeling, deposited energy.

Received: 25.04.2022
Revised: 25.04.2022
Accepted: 25.04.2022

DOI: 10.21883/JTF.2022.08.52768.104-22

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