Solid-State Electronics

Degradation of InGaN/GaN quantum well UV LEDs caused by short-term exposure to current

A. M. Ivanov, A. V. Klochkov

Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: A comparative analysis of the initial stages of degradation of ultraviolet and blue LED structures with InGaN/GaN quantum wells is carried out. In the mode of accelerated aging, the structures were subjected to short-term, sequential exposure to currents of 80–190 mA at forward bias. The exposure time did not exceed three hours. There was an increase (up to 20%) in the external quantum efficiency. The most probable physical mechanisms explaining the changes in InGaN/GaN LEDs are presented and possible ways to slow down the aging of UV LEDs are outlined.

Keywords: degradation of ultraviolet light-emitting diodes, increase in quantum efficiency, slowing down the aging.

Received: 04.08.2021
Revised: 16.11.2021
Accepted: 16.11.2021

DOI: 10.21883/jtf.2022.02.52019.229-21

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