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Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 87, Issue 11, Pages 1673–1676 (Mi jtf6075)

This article is cited in 12 papers

Physical science of materials

Fabrication of nanostructured silicon surface using selective chemical etching

A. B. Sagyndykova, Zh. K. Kalkozovab, G. Sh. Yar-Mukhamedovaa, Kh. A. Abdullinb

a Al-Farabi Kazakh National University, Almaty, Republic of Kazakhstan
b National Nanotechnology Laboratory of open type, al-Farabi KazNU, Almaty, Republic of Kazakhstan

Abstract: A two-stage process based on selective chemical etching induced by metal nanoclusters is used to fabricate nanostructured surfaces of silicon plates with a relatively low reflectance. At silicon surfaces covered with silver nanoclusters, the SERS effect is observed for rhodamine concentrations of about 10$^{-12}$ M. At certain technological parameters, the depth of the nanostructured layer weakly depends on the conditions for the two-stage etching, in particular, etching time. Under otherwise equal conditions for etching, the rate of the formation of textured layer in the $p$-type silicon is two times greater than the formation rate in the $n$-type silicon.

Received: 20.02.2017

DOI: 10.21883/JTF.2017.11.45127.2211


 English version:
Technical Physics, 2019, 62:11, 1675–1678

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