This article is cited in 1 paper

Photonics

Determination of thickness in silicon carbide structures by frequency analysis of the reflection spectrum

M. F. Panov, M. V. Pavlova

Saint Petersburg Electrotechnical University "LETI"

Abstract: The paper introduces a method of determining thicknesses of single- and multi-layer silicon carbide structures using infrared reflection spectrum frequency analysis. Spectrum waveform is affected by spectral interference in layers or groups of layers. LabView software package offered a solution to perform spectral analysis. The results are provided both for model structures and experimental spectra. Model structure’ reflection spectrum was evaluated using a dielectric function that took into account the response of lattice vibrations and free charge carriers. Experimental spectra were obtained from a real multilayer structure manufactured for power electronics devices.

Keywords: silicon carbide, epitaxial layer, IR reflection, spectrum.

Received: 22.09.2020
Revised: 03.12.2020
Accepted: 07.12.2020

DOI: 10.21883/JTF.2021.05.50696.276-20

 English version: Technical Physics, 2021, 66:6, 779–783

Bibliographic databases:

• 
•