P. G. Baranov, A. P. Bundakova, I. V. Borovyh, S. B. Orlinskii, R. Zondervan, J. Shmidt, “Spin polarization induced by optical and microwave resonance radiation in a Si vacancy in SiC: A promising subject for the spectroscopy of single defects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2007, Volume 86, Issue 3,Pages <nobr>231

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Spin polarization induced by optical and microwave resonance radiation in a Si vacancy in SiC: A promising subject for the spectroscopy of single defects

P. G. Baranov^a, A. P. Bundakova^a, I. V. Borovyh^bc, S. B. Orlinskii^de, R. Zondervan^e, J. Shmidt^e

^a Ioffe Physico-Technical Institute, Russian Academy of Sciences
^b Fachbereich Physik, Universitat Osnabrueck, Germany
^c Laboratory of Biophysics, Wageningen University, The Netherlands
^d Kazan State University
^e Department of Physics, Leiden University

Abstract: Depending on the temperature, crystal polytype, and crystal position, two opposite schemes have been observed for the optical alignment of the populations of spin sublevels in the ground state of a Si vacancy in SiC upon irradiation with unpolarized light at frequencies of zero-phonon lines. A giant change by a factor of 2–3 has been found in the luminescence intensity of zero-phonon lines in zero magnetic field upon absorption of microwave radiation with energy equal to the fine-structure splitting of spin sublevels of the vacancy ground state, which opens up possibilities for magnetic resonance detection at a single vacancy.

PACS: 61.72.-y, 76.30.-v

Received: 19.06.2007